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dc.contributor.authorKozáček, Boris
dc.contributor.authorFrivaldský, Michal
dc.contributor.authorJaroš, Viliam
dc.contributor.editorPinker, Jiří
dc.date.accessioned2019-10-08T09:26:41Z
dc.date.available2019-10-08T09:26:41Z
dc.date.issued2016
dc.identifier.citation2016 International Conference on Applied Electronics: Pilsen, 6th – 7th September 2016, Czech Republic, p.125-129.en
dc.identifier.isbn978–80–261–0601–2 (Print)
dc.identifier.isbn978–80–261–0602–9 (Online)
dc.identifier.issn1803–7232 (Print)
dc.identifier.issn1805–9597 (Online)
dc.identifier.urihttp://hdl.handle.net/11025/35204
dc.format5 s.
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plznics
dc.rights© Západočeská univerzita v Plznics
dc.subjecttransformátorová jádracs
dc.subjecttranzistorycs
dc.subjectpolovodičové diodycs
dc.subjectnitrid galliacs
dc.subjectkarbid křemíkucs
dc.subjectusměrňovačecs
dc.titleImproving qualitative parameters of LLC converter using a perspective semiconductor and magnetic componentsen
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThis paper has been realized in order to show simplified design procedure on how to meet the standards for dc-dc converters, which are being constantly increased. The paper deals with improvement of qualitative parameters of LLC converter. Using evaluations methods Figure of Merit, we select optimal components suitable for high-frequency applications with high power density, where we want elevate the significance of perspective of semiconductors GaN, SiC and modern magnetic materials. The main advantage of using FoM assessment technique for certain system's components is the elimination of simulation and physical experiments for effectivity evaluation. In conclusion, a comparison of converter considering standards ENERGY STAR defining the efficiency parameters of the converter at different load is provided. After it also comparisons of the efficiency using diode rectifier and synchronous rectifier on the secondary site are given.en
dc.subject.translatedtransformer coresen
dc.subject.translatedtransistorsen
dc.subject.translatedsemiconductor diodesen
dc.subject.translatedgallium nitrideen
dc.subject.translatedsilicon carbideen
dc.subject.translatedrectifiersen
dc.type.statusPeer-revieweden
Appears in Collections:Applied Electronics 2016
Applied Electronics 2016

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