Název:	An impact of the boost diode selection on the overall efficiency of Active Power Factor Correctors
Autoři:	Moldaschl, Jan Broulím, Jan
Citace zdrojového dokumentu:	2016 International Conference on Applied Electronics: Pilsen, 6th – 7th September 2016, Czech Republic, p.187-190.
Datum vydání:	2016
Nakladatel:	Západočeská univerzita v Plzni
Typ dokumentu:	konferenční příspěvek conferenceObject
URI:	http://hdl.handle.net/11025/35251
ISBN:	978–80–261–0601–2 (Print) 978–80–261–0602–9 (Online)
ISSN:	1803–7232 (Print) 1805–9597 (Online)
Klíčová slova:	Schottkyho dioda;karbid křemíku;silikon;spínací frekvence;Schottkyho bariéry;spojení
Klíčová slova v dalším jazyce:	Schottky diodes;silicon carbide;silicon;switching frequency;Schottky barriers;junctions
Abstrakt v dalším jazyce:	The paper focuses on a selection process of boost diodes for Active Power Factor Correctors (APFC) based on the Boost converter. The choice of the suitable boost diode plays crucial role for an efficiency of APFC. The main aim of the paper is devoted to theoretical and experimental comparison of the diodes. We have compared two ultra fast silicon diodes optimized for a Continuous Conduction Mode (CCM), soft-switching ultrafast rectifier and silicon carbide Schottky Barrier Diode (SBD). The experimental results show that the conduction losses are very similar but the switching losses are grossly different. In one case the diode optimized for soft-switching was not able to properly operate above 200W input power. It was caused likely due to the corrector works under CCM operation. Whereas, the SiC Schottky Barrier diodes are suitable for application in APFCs with high switching frequencies and working under CCM thanks to very small junction charge which is proved by this study.
Práva:	© Západočeská univerzita v Plzni
Vyskytuje se v kolekcích:	Články / Articles (KAE) Applied Electronics 2016 Applied Electronics 2016

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