Title:	An impact of the boost diode selection on the overall efficiency of Active Power Factor Correctors
Authors:	Moldaschl, Jan Broulím, Jan
Citation:	2016 International Conference on Applied Electronics: Pilsen, 6th – 7th September 2016, Czech Republic, p.187-190.
Issue Date:	2016
Publisher:	Západočeská univerzita v Plzni
Document type:	konferenční příspěvek conferenceObject
URI:	http://hdl.handle.net/11025/35251
ISBN:	978–80–261–0601–2 (Print) 978–80–261–0602–9 (Online)
ISSN:	1803–7232 (Print) 1805–9597 (Online)
Keywords:	Schottkyho dioda;karbid křemíku;silikon;spínací frekvence;Schottkyho bariéry;spojení
Keywords in different language:	Schottky diodes;silicon carbide;silicon;switching frequency;Schottky barriers;junctions
Abstract in different language:	The paper focuses on a selection process of boost diodes for Active Power Factor Correctors (APFC) based on the Boost converter. The choice of the suitable boost diode plays crucial role for an efficiency of APFC. The main aim of the paper is devoted to theoretical and experimental comparison of the diodes. We have compared two ultra fast silicon diodes optimized for a Continuous Conduction Mode (CCM), soft-switching ultrafast rectifier and silicon carbide Schottky Barrier Diode (SBD). The experimental results show that the conduction losses are very similar but the switching losses are grossly different. In one case the diode optimized for soft-switching was not able to properly operate above 200W input power. It was caused likely due to the corrector works under CCM operation. Whereas, the SiC Schottky Barrier diodes are suitable for application in APFCs with high switching frequencies and working under CCM thanks to very small junction charge which is proved by this study.
Rights:	© Západočeská univerzita v Plzni
Appears in Collections:	Články / Articles (KAE) Applied Electronics 2016 Applied Electronics 2016

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