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DC poleHodnotaJazyk
dc.contributor.authorMarek, Jan
dc.contributor.authorHospodka, Jiří
dc.contributor.authorŠubrt, Ondřej
dc.contributor.editorPinker, Jiří
dc.date.accessioned2019-10-16T05:49:09Z
dc.date.available2019-10-16T05:49:09Z
dc.date.issued2017
dc.identifier.citation2017 International Conference on Applied Electronics: Pilsen, 5th – 6th September 2017, Czech Republic, p.107-110.en
dc.identifier.isbn978–80–261–0641–8 (Print)
dc.identifier.isbn978–80–261–0642–5 (Online)
dc.identifier.issn1803–7232 (Print)
dc.identifier.issn1805–9597 (Online)
dc.identifier.urihttp://hdl.handle.net/11025/35420
dc.format4 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plznics
dc.rights© Západočeská univerzita v Plznics
dc.subjectpropojené nabíjecí čerpadlocs
dc.subjectmodelcs
dc.subjectsimulacecs
dc.subjectsilná inverzecs
dc.subjectsymbolický popiscs
dc.titleDescription of the functional blocks for the cross-coupled charge pump design algorithmen
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThis paper presents the circuit model that is used for the cross-coupled charge pump design algorithm. Symbolic description of the pump stage model as an analog functional block for high-voltage application is firstly discussed. Design process has been done by using simplified BSIM model equations assuming the long channel MOSFET. Characteristics have been verified by ELDO Spice and compared with the found relationships. Static and dynamic parameters of the subcircuit have been tested in two-stages structure by LT Spice simulator. Analysis results show the consistency between model and real circuits characteristics under given conditions. Complex model provides the reliable results for significantly smaller strange capacitances in comparison with the main pump capacitances. The model can be used for design and prediction of the pump parameters without long-time simulation process. The strong inversion region of MOSFET is expected, thus equations are correct for other MOSFET models that are used in chip design (PSP).en
dc.subject.translatedcross-coupled charge pumpen
dc.subject.translatedmodelen
dc.subject.translatedsimulationen
dc.subject.translatedstrong inversionen
dc.subject.translatedsymbolic descriptionen
dc.type.statusPeer-revieweden
Vyskytuje se v kolekcích:Applied Electronics 2017
Applied Electronics 2017

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