| Title: | Current limiting driver for GaN half-bridge |
| Authors: | Skarolek, Pavel Lettl, Jiří |
| Citation: | 2017 International Conference on Applied Electronics: Pilsen, 5th – 6th September 2017, Czech Republic, p.227-230. |
| Issue Date: | 2017 |
| Publisher: | Západočeská univerzita v Plzni |
| Document type: | konferenční příspěvek conferenceObject |
| URI: | http://hdl.handle.net/11025/35442 |
| ISBN: | 978–80–261–0641–8 (Print) 978–80–261–0642–5 (Online) |
| ISSN: | 1803–7232 (Print) 1805–9597 (Online) |
| Keywords: | GaN MOSFET;poloviční most;řidič;aktuální ochrana |
| Keywords in different language: | GaN MOSFET;half-bridge;driver;current protection |
| Abstract in different language: | This paper presents a GaN transistor half-bridge prototype with robust pulse by pulse current limiting drivers designed to turn off safely the transistor for the rest of the PWM period when the drain current exceeds the set value. The half-bridge is intended as the key part of a DC/AC converter output stage with operating frequency up to 1 MHz. The current limiting circuit is designed to meet the requirements for safe operation of GaN transistors. The proposed current limiting driver is five times faster compared to common integrated drivers with included current limiting circuit. |
| Rights: | © Západočeská univerzita v Plzni |
| Appears in Collections: | Applied Electronics 2017 Applied Electronics 2017 |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skarolek.pdf | Plný text | 838,81 kB | Adobe PDF | View/Open |
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