Full metadata record
| DC pole | Hodnota | Jazyk |
|---|---|---|
| dc.contributor.author | Štěpánek, Jan | |
| dc.contributor.author | Bednář, Bedřich | |
| dc.contributor.author | Drábek, Pavel | |
| dc.date.accessioned | 2020-01-20T11:00:17Z | - |
| dc.date.available | 2020-01-20T11:00:17Z | - |
| dc.date.issued | 2019 | |
| dc.identifier.citation | ŠTĚPÁNEK, J., BEDNÁŘ, B., DRÁBEK, P. Verification of the current load capacity of the MOSFET transistor for low-voltage application using temperature estimation. In: Proceedings of the IEEE International Symposium on Industrial Electronics (ISIE 2019). Piscataway: IEEE, 2019. s. 1014-1019. ISBN 978-1-72813-666-0 , ISSN 2163-5137. | en |
| dc.identifier.isbn | 978-1-72813-666-0 | |
| dc.identifier.issn | 2163-5137 | |
| dc.identifier.uri | 2-s2.0-85070618518 | |
| dc.identifier.uri | http://hdl.handle.net/11025/36307 | |
| dc.format | 6 s. | cs |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | en |
| dc.publisher | IEEE | en |
| dc.relation.ispartofseries | Proceedings of the IEEE International Symposium on Industrial Electronics (ISIE 2019) | en |
| dc.rights | Plný text je přístupný v rámci univerzity přihlášeným uživatelům. | cs |
| dc.rights | © IEEE | en |
| dc.title | Verification of the current load capacity of the MOSFET transistor for low-voltage application using temperature estimation | en |
| dc.type | konferenční příspěvek | cs |
| dc.type | conferenceObject | en |
| dc.rights.access | restrictedAccess | en |
| dc.type.version | publishedVersion | en |
| dc.description.abstract-translated | This paper deals with the verification of the maximum current rating of MOSFET transistors in a discrete package TO-247AC. The main motivation for this analysis was the redesign of AC power drive chain for electric go kart with three phase power converter of the output nominal power 10kW, a supply voltage 48V and minimal switching frequency 50kHz. The inverter must be able to operate with short-term current overload up to 450A. A parallel combination of three power transistors is used to design the basic power switch. The HEXFET Power MOSFET transistor (IRFP4468PdF in a discrete case TO-247AC) was chosen as a basic structural element. We used DC analysis to verify the proper ies and imits of the discrete case TO-247AC. The maximum rated current through the MOSFET transistor was determined with respect to the maximum chip temperature and enclosure limitation. In order to accurately verify the measuring results f transistor temperature, a thermo-camera was used (the color is used to define the emissivity of measured object with reference ε = 0,9). Temperature was also measured by a thermometer PT100 sensor and estimated from the forward voltage on freewheeling diode. | en |
| dc.subject.translated | MOSFET transistor | en |
| dc.subject.translated | power electronic converter | en |
| dc.subject.translated | thermal analysis | en |
| dc.subject.translated | PN junction | en |
| dc.identifier.doi | 10.1109/ISIE.2019.8781249 | |
| dc.type.status | Peer-reviewed | en |
| dc.identifier.document-number | 500998700152 | |
| dc.identifier.obd | 43926503 | |
| Vyskytuje se v kolekcích: | Konferenční příspěvky / Conference papers (KEV) Konferenční příspěvky / Conference papers (RICE) OBD | |
Soubory připojené k záznamu:
| Soubor | Velikost | Formát | |
|---|---|---|---|
| 1014-vf-011258-STEPANEK.pdf | 2,04 MB | Adobe PDF | Zobrazit/otevřít Vyžádat kopii |
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