Title: | Parameter Calculations for SiC Three-Phase Rectifier |
Authors: | Očenášek, Jiří |
Citation: | 2021 International Conference on Applied Electronics: Pilsen, 7th – 8th September 2021, Czech Republic, p. 115-118. |
Issue Date: | 2021 |
Publisher: | University of West Bohemia |
Document type: | conferenceObject konferenční příspěvek |
URI: | http://hdl.handle.net/11025/45577 |
ISBN: | 978–80–261–0972–3 (Print) 978–80–261–0973–0 (Online) |
ISSN: | 1803–7232 (Print) 1805–9597 (Online) |
Keywords: | usměrňovač;silikon;karbid;napájení;Schottky;dioda |
Keywords in different language: | rectifier;silicon;carbide;power;Schottky;diode |
Abstract in different language: | Main focus of this work is to design a three–phase rectifier based on silicon–carbide power diodes. Main part of the article is dedicated do equations which are then used to obtain temperatures of power diode junction based on current, voltage and switching frequency. From these, power losses are calculated. Combined with selection of cooling heat sink, final temperatures are obtained. There were two methods used. One simplified equation, neglecting shape of forward current to calculate forward losses and the second where the shape of current is acknowledged and calculated with. Final values are then reviewed via simulation. |
Rights: | © University of West Bohemia, 2021 |
Appears in Collections: | Konferenční příspěvky / Conference Papers (KEV) Applied Electronics 2021 Applied Electronics 2021 |
Files in This Item:
File | Description | Size | Format | |
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Parameter_Calculations_for_SiC_Three-Phase_Rectifier.pdf | Plný text | 712,53 kB | Adobe PDF | View/Open |
Please use this identifier to cite or link to this item:
http://hdl.handle.net/11025/45577
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