Title: Investigation of memristors’ own parasitic parameters and mutual inductances between neighbouring elements of memristor matrix and their influence on the characteristics
Authors: Mladenov, Valeri
Kirilov, Stoyan
Citation: ISTET 2013: International Symposiumon Theoretical Electrical Engineering: 24th – 26th June 2013: Pilsen, Czech Republic, p. II-13-II-14.
Issue Date: 2013
Publisher: University of West Bohemia
Document type: konferenční příspěvek
URI: http://hdl.handle.net/11025/11477
ISBN: 978-80-261-0246-5
Keywords: TiO2 memristor;parazitické parametry;vzájemná indukčnost;vlastnosti memristorů
Keywords in different language: TiO2 memristor;parasitic parameters;mutual inductance;memristor characteristics
Abstract: The main purpose of this paper is to investigate the influence of the mutual inductance between the memristors of a memory matrix and of the memristor parasitic parameters on their characteristics at impulse mode. The values of the parasitic capacitance and inductance of a memristor are calculated. In the experiments three possible values of the coefficient of magnetic connection between elements are used. The equivalent memristor circuit is analysed in MATLAB environment. The basic effects from the analysis are given. The main result is that the parasitic parameters do not strongly affect the memristor voltage drops at frequencies up to 2 GHz.
Rights: © University of West Bohemia
Appears in Collections:ISTET 2013
ISTET 2013
ISTET 2013

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