|Title:||Bi ultra-thin crystalline films on InAs(111)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study|
|Authors:||Nicolai, Laurent Christophe|
Richter, M. C.
|Citation:||NICOLAI, L. C. H. ., MARIOT, J. ., DJUKIC, U. ., WANG, W. ., HECKMANN, O. ., RICHTER, M. C. ., KANSKI, J. ., LEANDERSSON, M. ., BALASUBRAMANIAN, T. ., SADOWSKI, J. ., BRAUN, J. ., EBERT, H. ., VOBORNIK, I. ., FUJII, J. ., MINÁR, J. ., HRICOVINI, K. . Bi ultra-thin crystalline films on InAs(111)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study. New journal of physics, 2019, roč. 21, č. 12, s. ISSN 1367-2630.|
|Keywords in different language:||bismuth;indium arsenide;growth;ultra-thin films;angle-resolved photoemission;electronic structure calculations;circular dichroism|
|Abstract:||The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(111) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d(5/2) photoelectron signals allow to get a comprehensive picture of the Bi/InAs(111) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of approximate to 10 bi-layers on the A face is identical to that of bulk Bi, while more than approximate to 30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the (Gamma) over bar point of the Brillouin zone.|
|Rights:||© IOP Publishing|
|Appears in Collections:||Články / Articles (RAM)|
Files in This Item:
|NMD+19_Nicolaï_2019_New_J._Phys._21_123012.pdf||1,34 MB||Adobe PDF||View/Open|
Please use this identifier to cite or link to this item:
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.