Title: High-frequency full-bridge LLC resonant inverter with GaN HEMT
Authors: Krýsl, Pavel
Jára, Martin
Peroutka, Zdeněk
Citation: KRÝSL, P. JÁRA, M. PEROUTKA, Z. High-frequency full-bridge LLC resonant inverter with GaN HEMT. In Proceedings of the 2022 20th International Conference on Mechatronics - Mechatronika, ME 2022. Piscataway: IEEE, 2022. s. 126-129. ISBN: 978-1-66541-040-3
Issue Date: 2022
Publisher: IEEE
Document type: konferenční příspěvek
URI: 2-s2.0-85146330078
ISBN: 978-1-66541-040-3
Keywords in different language: GaN;high-switching frequency;efficiency;compact converter;LLC
Abstract in different language: In this paper, the development of a compact LLC resonant converter based on GaN devices and with output power up to 10 kW is described. The capability of 1 MHz operation contributes to small overall dimensions involving the power stage, drivers and also the control system. The characteristics of the power switches, consisting of three GaN transistors in parallel placed on an insulated metal substrate (IMS), are provided together with their double pulse test performance. High-frequency operations in resonant mode up to 10kW are demonstrated. Converter construction based on sandwich structure and overall mechanical assembly are detailed as well.
Rights: Plný text je přístupný v rámci univerzity přihlášeným uživatelům.
Appears in Collections:Konferenční příspěvky / Conference papers (RICE)
Konferenční příspěvky / Conference Papers (KEV)

Please use this identifier to cite or link to this item: http://hdl.handle.net/11025/51310

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