Full metadata record
DC poleHodnotaJazyk
dc.contributor.authorÁč, Vladimír
dc.contributor.authorSumega, Miroslav
dc.contributor.editorPihera, Josef
dc.contributor.editorSteiner, František
dc.date.accessioned2012-10-17T12:16:22Z
dc.date.available2012-10-17T12:16:22Z
dc.date.issued2009
dc.identifier.citationElectroscope, 2009, Konference EDS 2009.cs
dc.identifier.issn1802-4564
dc.identifier.urihttp://147.228.94.30/images/PDF/Rocnik2009/EDS_2009/ac.pdf
dc.identifier.urihttp://hdl.handle.net/11025/549
dc.format4 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plzni, Fakulta elektrotechnickács
dc.relation.ispartofseriesElectroscopecs
dc.rightsCopyright © 2007-2010 Electroscope. All Rights Reserved.en
dc.subjectvýkonové tranzistorycs
dc.subjectpokovovánícs
dc.subjectTiWcs
dc.subjectTi-TiNcs
dc.subjectelektrotechnická diagnostikacs
dc.titleThe influence of TiW and Ti-TiN interface layers on power transistor parametersen
dc.typečlánekcs
dc.typekonferenční příspěvekcs
dc.typearticleen
dc.typeconferenceObjecten
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThe power MOS transistors were tested with different diffusion barrier type used in metallization contact stack. The contact structure in integrated circuit (IC) needs to have good ohmic properties with low contact resistance and it needs to be thermodynamically stable to prevent contact degradation. Because high current operation the power transistors in IC should be most sensitive parts for barrier stability testing. The PtSi-TiW-AlCu metallization technology will by compared with PtSi-Ti-TiN-AlCu metallization. Generally, the TiW diffusion barrier has lower thermodynamic stability with AlCu metallization compare to TiN. Therefore a Ti-TiN barrier implementation could be attractive for manufacturing using TiW barrier technology. It will be interesting to test the RON (transistor resistance in switch ON state), gate threshold voltage and leakage current parameters on power MOS transistors because the barrier changes. The barrier and aluminium-copper interface will be compared on the SEM cross-sections samples.en
dc.subject.translatedpower transistorsen
dc.subject.translatedmetallizationen
dc.subject.translatedelectrical diagnosticsen
dc.subject.translatedTiWen
dc.subject.translatedTi-TiNen
dc.type.statusPeer-revieweden
Vyskytuje se v kolekcích:EDS 2009 (2009)

Soubory připojené k záznamu:
Soubor Popis VelikostFormát 
ac.pdf213,48 kBAdobe PDFZobrazit/otevřít
Zobrazit minimální záznam Zobrazit statistiky


Použijte tento identifikátor k citaci nebo jako odkaz na tento záznam: http://hdl.handle.net/11025/549

Všechny záznamy v DSpace jsou chráněny autorskými právy, všechna práva vyhrazena.

hledání
navigace
  1. DSpace at University of West Bohemia
  2. Publikace ZČU / UWB Publications
  3. Časopisy ZČU / UWB Journals
  4. Electroscope
  5. Ročník 2009
  6. EDS 2009 (2009)