Title: Waffle MOS channel aspect ratio calculation with Schwarz-Christoffel transformation
Authors: Vacula, Patrik
Husák, Miroslav
Citation: Electroscope. 2013, č. 5, EEICT + EDS.
Issue Date: 18-Nov-2013
Publisher: Západočeská univerzita v Plzni, Fakulta elektrotechnická
Document type: článek
article
URI: http://ek702p10-ket.fel.zcu.cz/images/PDF/Rocnik2013/Cislo5_2013/r7c5c11.pdf
http://hdl.handle.net/11025/6626
ISSN: 1802-4564
Keywords: Schwarz-Christoffelova transformace;numerické modelování;tranzistory MOS;MOS kanál
Keywords in different language: Schwarz-Christoffel transformation;numerical modelling;MOS transistors;MOS channel
Abstract in different language: The main goal of this work is to describe alternative way of effective channel width to length (W/L) ratio calculation for Waffle MOS structure. Due to non-conventional gate geometry of the Waffle MOS transistor compare to the fingers structure, the channel W/L ratio calculation is not trivial and conformal mapping can be used. In terms of mapping the Schwarz-Christoffel (SC) Transformation is proposed. The optimal element shape of the Waffle MOS is proposed, to be easy solved by SC conformal mapping. Because result of the conformal mapping for the Waffle MOS element is rectangle shape in transformed domain, the solving of the effective channel W/L ratio of the element is become very easy because it is aspect ratio of rectangle in transformed domain.
Rights: © 2013 Electroscope. All rights reserved.
Appears in Collections:Číslo 5 (2013)
Číslo 5 (2013)

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