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dc.contributor.authorTadeusiewicz, Michał
dc.contributor.authorOssowski, Marek
dc.date.accessioned2014-07-02T12:06:13Z-
dc.date.available2014-07-02T12:06:13Z-
dc.date.issued2013
dc.identifier.citationISTET 2013: International Symposiumon Theoretical Electrical Engineering: 24th – 26th June 2013: Pilsen, Czech Republic, p. II-9-II-10.en
dc.identifier.isbn978-80-261-0246-5
dc.identifier.urihttp://hdl.handle.net/11025/11475
dc.description.abstractThe paper is focused on the analysis of circuits containing MOS transistors fabricated in submicrometer technology, having multiple DC operating points. The transistors are characterized by intricate models BSIM 3 and BSIM 4. To find the operating points an algorithm is proposed, based on the homotopy concept and the simplicial method. The algorithm is capable of finding multiple DC operating points but it does not guarantee finding all of them. For illustration a numerical example is given.en
dc.format2 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherUniversity of West Bohemiaen
dc.relation.ispartofseriesISTET: International Symposium on Theoretical Electrical Engineeringen
dc.rights© University of West Bohemiaen
dc.subjectanalogové obvodycs
dc.subjectdiagnostika poruchcs
dc.subjectMOS tranzistorycs
dc.subjecthomotopiecs
dc.titleFinding multiple DC operating points of MOS circuits fabricated in submicrometer technologyen
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.subject.translatedanalog circuitsen
dc.subject.translatedfaulty diagnosisen
dc.subject.translatedMOS transistorsen
dc.subject.translatedhomotopyen
dc.type.statusPeer-revieweden
Vyskytuje se v kolekcích:ISTET 2013
ISTET 2013
ISTET 2013

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