| Title: | Finding multiple DC operating points of MOS circuits fabricated in submicrometer technology |
| Authors: | Tadeusiewicz, Michał Ossowski, Marek |
| Citation: | ISTET 2013: International Symposiumon Theoretical Electrical Engineering: 24th – 26th June 2013: Pilsen, Czech Republic, p. II-9-II-10. |
| Issue Date: | 2013 |
| Publisher: | University of West Bohemia |
| Document type: | konferenční příspěvek conferenceObject |
| URI: | http://hdl.handle.net/11025/11475 |
| ISBN: | 978-80-261-0246-5 |
| Keywords: | analogové obvody;diagnostika poruch;MOS tranzistory;homotopie |
| Keywords in different language: | analog circuits;faulty diagnosis;MOS transistors;homotopy |
| Abstract: | The paper is focused on the analysis of circuits containing MOS transistors fabricated in submicrometer technology, having multiple DC operating points. The transistors are characterized by intricate models BSIM 3 and BSIM 4. To find the operating points an algorithm is proposed, based on the homotopy concept and the simplicial method. The algorithm is capable of finding multiple DC operating points but it does not guarantee finding all of them. For illustration a numerical example is given. |
| Rights: | © University of West Bohemia |
| Appears in Collections: | ISTET 2013 ISTET 2013 ISTET 2013 |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Tadeusiewicz.pdf | Plný text | 96,73 kB | Adobe PDF | View/Open |
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