Název:	Equivalent circuit of Hall effect generator
Autoři:	Košek, Miloslav Richter, Aleš Mikolanda, Tomáš
Citace zdrojového dokumentu:	AMTEE ’07 : seventh international conference on Advanced Methods in the Theory of Electrical Engineering : September 10-12, 2007 [Pilsen, Czech Republic].
Datum vydání:	2007
Nakladatel:	University of West Bohemia
Typ dokumentu:	konferenční příspěvek conferenceObject
URI:	http://amtee.zcu.cz/AMTEE/ArchivedProceedings/proceedings_AMTEE_2007/data/section_i.html http://hdl.handle.net/11025/25788
ISBN:	978-80-7043-564-9
Klíčová slova:	Hallův efekt;teorie elektronového plynu;lineární ekvivalentní obvod;polovodičové parametry
Klíčová slova v dalším jazyce:	Hallův effect;electron gas theory;linear equivalent circuit;semiconductor parameters
Abstrakt v dalším jazyce:	Now Hall Effect devices are used in many technical applications, but the full effect description is only in special literature. In the paper the microscopic theory based on classical electron gas model is presented and linear equivalent circuit of Hall generator is derived from the model. Extensive numerical simulation of practical devices results in a full set of device parameters and a lot of characteristics. Numerical results reveal that Hall generator is a soft source of low voltage and produces very small output current and power. It follows from the characteristics that driving constant current source in not necessary at standard conditions and can be replaced by a more convenient constant voltage source. It is shown that the heat production in probe of small size limits the value of electrical parameters and is the main problem in applications. Presented graphs show that the parameters of Hall probe depend strongly on semiconductor impurity doping.
Práva:	© University of West Bohemia
Vyskytuje se v kolekcích:	CPEE – AMTEE 2007 CPEE – AMTEE 2007

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