Title: Current limiting driver for GaN half-bridge
Authors: Skarolek, Pavel
Lettl, Jiří
Citation: 2017 International Conference on Applied Electronics: Pilsen, 5th – 6th September 2017, Czech Republic, p.227-230.
Issue Date: 2017
Publisher: Západočeská univerzita v Plzni
Document type: konferenční příspěvek
URI: http://hdl.handle.net/11025/35442
ISBN: 978–80–261–0641–8 (Print)
978–80–261–0642–5 (Online)
ISSN: 1803–7232 (Print)
1805–9597 (Online)
Keywords: GaN MOSFET;poloviční most;řidič;aktuální ochrana
Keywords in different language: GaN MOSFET;half-bridge;driver;current protection
Abstract in different language: This paper presents a GaN transistor half-bridge prototype with robust pulse by pulse current limiting drivers designed to turn off safely the transistor for the rest of the PWM period when the drain current exceeds the set value. The half-bridge is intended as the key part of a DC/AC converter output stage with operating frequency up to 1 MHz. The current limiting circuit is designed to meet the requirements for safe operation of GaN transistors. The proposed current limiting driver is five times faster compared to common integrated drivers with included current limiting circuit.
Rights: © Západočeská univerzita v Plzni
Appears in Collections:Applied Electronics 2017
Applied Electronics 2017

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