Title: Detector for terahertz applications based on a serpentine array of integrated GaAs/InGaAs/AlGaAs-field-effect transistors
Authors: Yermolaev, Denis Mikhailovich
Khmyrova, Irina
Polushkin, Evgeny
Kovalchuk, Anatoly
Gavrilenko, Vladimir
Maremyanin, Kirill
Maleev, Nikolai
Ustinov, Victor
Zemlyakov, Valeriy
Bespalov, Vladimir Alexandrovič
Egorkin, Vladimir
Popov, Viacheslav
Shapoval, Sergei
Citation: 2017 International Conference on Applied Electronics: Pilsen, 5th – 6th September 2017, Czech Republic, p.279-282.
Issue Date: 2017
Publisher: Západočeská univerzita v Plzni
Document type: konferenční příspěvek
URI: http://hdl.handle.net/11025/35453
ISBN: 978–80–261–0641–8 (Print)
978–80–261–0642–5 (Online)
ISSN: 1803–7232 (Print)
1805–9597 (Online)
Keywords: pole FET;terahertzové záření;plazmatické vlny;plovoucí elektroda
Keywords in different language: FET array;terahertz radiation;plasma waves;floating electrode
Abstract in different language: Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations in the HEMT's channel. The peculiarities of THz response of the detector in question including an enhanced noise-equivalent power were demonstrated.
Rights: © Západočeská univerzita v Plzni
Appears in Collections:Applied Electronics 2017
Applied Electronics 2017

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