Title:	Detector for terahertz applications based on a serpentine array of integrated GaAs/InGaAs/AlGaAs-field-effect transistors
Authors:	Yermolaev, Denis Mikhailovich Khmyrova, Irina Polushkin, Evgeny Kovalchuk, Anatoly Gavrilenko, Vladimir Maremyanin, Kirill Maleev, Nikolai Ustinov, Victor Zemlyakov, Valeriy Bespalov, Vladimir Alexandrovič Egorkin, Vladimir Popov, Viacheslav Shapoval, Sergei
Citation:	2017 International Conference on Applied Electronics: Pilsen, 5th – 6th September 2017, Czech Republic, p.279-282.
Issue Date:	2017
Publisher:	Západočeská univerzita v Plzni
Document type:	konferenční příspěvek conferenceObject
URI:	http://hdl.handle.net/11025/35453
ISBN:	978–80–261–0641–8 (Print) 978–80–261–0642–5 (Online)
ISSN:	1803–7232 (Print) 1805–9597 (Online)
Keywords:	pole FET;terahertzové záření;plazmatické vlny;plovoucí elektroda
Keywords in different language:	FET array;terahertz radiation;plasma waves;floating electrode
Abstract in different language:	Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations in the HEMT's channel. The peculiarities of THz response of the detector in question including an enhanced noise-equivalent power were demonstrated.
Rights:	© Západočeská univerzita v Plzni
Appears in Collections:	Applied Electronics 2017 Applied Electronics 2017

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