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DC poleHodnotaJazyk
dc.contributor.authorPrušáková, Lucie
dc.contributor.authorHubík, Pavel
dc.contributor.authorAijaz, Asim
dc.contributor.authorNyberg, Tomas
dc.contributor.authorKubart, Tomas
dc.date.accessioned2021-10-25T10:00:25Z-
dc.date.available2021-10-25T10:00:25Z-
dc.date.issued2020
dc.identifier.citationPRUŠÁKOVÁ, L. HUBÍK, P. AIJAZ, A. NYBERG, T. KUBART, T. Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics. Coatings, 2020, roč. 10, č. 1, s. nestránkováno. ISSN: 2079-6412cs
dc.identifier.issn2079-6412
dc.identifier.uri2-s2.0-85079060260
dc.identifier.urihttp://hdl.handle.net/11025/45529
dc.format7 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherMDPIen
dc.relation.ispartofseriesCoatingsen
dc.rights© Creative Commons Attribution 4.0 Internationalen
dc.titleRoom Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronicsen
dc.typečlánekcs
dc.typearticleen
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedAmorphous oxide semiconductors (AOSs) are interesting materials which combine optical transparency with high electron mobility. AOSs can be prepared at low temperatures by high throughput deposition techniques such as magnetron sputtering and are thus suitable for flexible transparent electronics such as flexible displays, thin-film transistors, and sensors. In magnetron sputtering the energy input into the growing film can be controlled by the plasma conditions instead of the substrate temperature. Here, we report on magnetron sputtering of InGaZnO (IGZO) and ZnSnO (ZTO) with a focus on the e ect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited a resistivity of about 2 102 Ohmcm and an electron mobility of 18 cm2V1s1. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate.en
dc.subject.translatedamorphous oxide semiconductorsen
dc.subject.translatedmagnetron sputteringen
dc.subject.translatedInGaZnOen
dc.subject.translatedZnSnOen
dc.identifier.doi10.3390/coatings10010002
dc.type.statusPeer-revieweden
dc.identifier.document-number513694500027
dc.identifier.obd43933440
dc.project.IDED2.1.00/03.0088/CENTEM - Centrum nových technologií a materiálůcs
dc.project.IDLO1402/CENTEM+cs
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