Title:	Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics
Authors:	Prušáková, Lucie Hubík, Pavel Aijaz, Asim Nyberg, Tomas Kubart, Tomas
Citation:	PRUŠÁKOVÁ, L. HUBÍK, P. AIJAZ, A. NYBERG, T. KUBART, T. Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics. Coatings, 2020, roč. 10, č. 1, s. nestránkováno. ISSN: 2079-6412
Issue Date:	2020
Publisher:	MDPI
Document type:	článek article
URI:	2-s2.0-85079060260 http://hdl.handle.net/11025/45529
ISSN:	2079-6412
Keywords in different language:	amorphous oxide semiconductors;magnetron sputtering;InGaZnO;ZnSnO
Abstract in different language:	Amorphous oxide semiconductors (AOSs) are interesting materials which combine optical transparency with high electron mobility. AOSs can be prepared at low temperatures by high throughput deposition techniques such as magnetron sputtering and are thus suitable for flexible transparent electronics such as flexible displays, thin-film transistors, and sensors. In magnetron sputtering the energy input into the growing film can be controlled by the plasma conditions instead of the substrate temperature. Here, we report on magnetron sputtering of InGaZnO (IGZO) and ZnSnO (ZTO) with a focus on the e ect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited a resistivity of about 2 102 Ohmcm and an electron mobility of 18 cm2V1s1. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate.
Rights:	© Creative Commons Attribution 4.0 International
Appears in Collections:	OBD

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