Název:	Reactions of nickel-based ohmic contacts with n-type 4H silicon carbide
Autoři:	Barda, Bohumil Macháč, Petr
Citace zdrojového dokumentu:	Electroscope. 2009, Konference EDS 2009.
Datum vydání:	2009
Nakladatel:	Západočeská univerzita v Plzni, Fakulta elektrotechnická
Typ dokumentu:	článek konferenční příspěvek article conferenceObject
URI:	http://147.228.94.30/images/PDF/Rocnik2009/EDS_2009/machac.pdf http://hdl.handle.net/11025/537
ISSN:	1802-4564
Klíčová slova:	niklové ohmické kontakty;4H-SiC;elektrotechnická diagnostika
Klíčová slova v dalším jazyce:	nickel-based ohmic contacts;4H-SiC;electrical diagnostics
Abstrakt v dalším jazyce:	We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6–7×10-5  cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formation was prevented by increasing the heating up rate of annealing. Due to suppressed interaction with SiC and good morphology, Ni2Si is the most suitable metallization for shallow silicon carbide structures.
Práva:	Copyright © 2007-2010 Electroscope. All Rights Reserved.
Vyskytuje se v kolekcích:	Konference EDS 2009 EDS 2009 (2009)

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