Title:	Electronic structure of Bi nanolines on InAs(100)
Authors:	Nafday, Dhani Richter, Christine Heckmann, Olivier Wang, Weimin Mariot, Jean-Michel Djukic, Uros Vobornik, Ivana Lefevre, Patrick Taleb-Ibrahimi, Amina Bertran, Franco̧is Rault, Julien Nicolai, Laurent Christophe Ong, Chin Shen Thunström, Patrik Hricovini, Karol Minár, Jan Di Marco, Igor
Citation:	NAFDAY, D. RICHTER, CH. HECKMANN, O. WANG, W. MARIOT, J. DJUKIC, U. VOBORNIK, I. LEFEVRE, P. TALEB-IBRAHIMI, A. BERTRAN, F. RAULT, J. NICOLAI, LCH. ONG, CHS. THUNSTRÖM, P. HRICOVINI, K. MINÁR, J. DI MARCO, I. Electronic structure of Bi nanolines on InAs(100). APPLIED SURFACE SCIENCE, 2023, roč. 611, č. FEB 15 2023, s. nestránkováno. ISSN: 0169-4332
Issue Date:	2023
Publisher:	Elsevier
Document type:	článek article
URI:	2-s2.0-85141749528 http://hdl.handle.net/11025/53903
ISSN:	0169-4332
Keywords in different language:	electronic band structure;surface states;photoemsission;thin film;reconstructed surface
Abstract in different language:	Self-assembled nanolines are attractive to build the technological devices of next generation, but characterizing their electronic properties is often difficult to achieve. In this work we employ angle-resolved photoemission spectroscopy and density functional theory to clarify the electronic structure exhibited by self-assembled Bi nanolines grown on the InAs(100) surface. A surface resonance associated to the reconstructed ζ(4 × 2) surface is visible in the photoemission spectra before and after the formation of the Bi nanolines. This demonstrates that Bi deposition does not necessarily drive a transition to an unreconstructed surface in the substrate, which is contrary to what was reported in previous studies. In addition, experiment and theory show the presence of a flat band located in the band gap of InAs, just above the valence band maximum. This flat band is associated to the Bi nanolines and possesses a strong orbital character, consistent with its unidimensional nature. These spectral features suggest that Bi nanolines on InAs(100) may have a strongly polarized conductivity, which makes them suitable to be exploited as nanowires in nanotechnology. The coexistence with an accumulation layer suggests an even farther functionalization.
Rights:	© The Author(s)
Appears in Collections:	Články / Articles (RAM) OBD

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