Title: Substrate Preparation for Manufacturing of Aluminum Nitride Layers
Authors: Dallaeva, Dinara
Tománek, Pavel
Citation: Electroscope. 2013, č. 5, EEICT + EDS.
Issue Date: 18-Nov-2013
Publisher: Západočeská univerzita v Plzni, Fakulta elektrotechnická
Document type: article
článek
URI: http://147.228.94.30/images/PDF/Rocnik2013/Cislo5_2013/r7c5c2.pdf
http://hdl.handle.net/11025/6618
ISSN: 1802-4564
Keywords: tenké vrstvy;depozice;nitridy hliníku;suché leptání;zkoušení materiálu
Keywords in different language: thin films;deposition;alluminium nitrids;dry etching;material testing
Abstract: Aluminum nitrides layers prepared on sapphire substrates are examined. The substrate surface was treated by dry plasma etching. The morphology of aluminum nitride thin films was studied by atomic force microscopy. Lateral force atomic force microscopy was used to study the morphology heterogeneity. The dependence of films morphology on the formation conditions has been defined. The objective of the study contributes to the improvement of technological process of dry etching and film deposition.
Rights: © 2013 Electroscope. All rights reserved.
Appears in Collections:Číslo 5 (2013)
Číslo 5 (2013)

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