| Title: | Substrate Preparation for Manufacturing of Aluminum Nitride Layers |
| Authors: | Dallaeva, Dinara Tománek, Pavel |
| Citation: | Electroscope. 2013, č. 5, EEICT + EDS. |
| Issue Date: | 2013 |
| Publisher: | Západočeská univerzita v Plzni, Fakulta elektrotechnická |
| Document type: | článek article |
| URI: | http://147.228.94.30/images/PDF/Rocnik2013/Cislo5_2013/r7c5c2.pdf http://hdl.handle.net/11025/6618 |
| ISSN: | 1802-4564 |
| Keywords: | tenké vrstvy;depozice;nitridy hliníku;suché leptání;zkoušení materiálu |
| Keywords in different language: | thin films;deposition;alluminium nitrids;dry etching;material testing |
| Abstract in different language: | Aluminum nitrides layers prepared on sapphire substrates are examined. The substrate surface was treated by dry plasma etching. The morphology of aluminum nitride thin films was studied by atomic force microscopy. Lateral force atomic force microscopy was used to study the morphology heterogeneity. The dependence of films morphology on the formation conditions has been defined. The objective of the study contributes to the improvement of technological process of dry etching and film deposition. |
| Rights: | © 2013 Electroscope. All rights reserved. |
| Appears in Collections: | Číslo 5 (2013) Číslo 5 (2013) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| r7c5c2.pdf | Plný text | 737,42 kB | Adobe PDF | View/Open |
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