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DC poleHodnotaJazyk
dc.contributor.authorDallaeva, Dinara
dc.contributor.authorBilalov, Bilal
dc.contributor.authorTománek, Pavel
dc.contributor.editorPihera, Josef
dc.contributor.editorSteiner, František
dc.date.accessioned2012-11-27T11:59:03Z
dc.date.available2012-11-27T11:59:03Z
dc.date.issued2012
dc.identifier.citationElectroscope. 2012, č. 5, EEICT 2012.cs
dc.identifier.issn1802-4564
dc.identifier.urihttp://147.228.94.30/images/PDF/Rocnik2012/Cislo5_2012/r6c5c4.pdf
dc.identifier.urihttp://hdl.handle.net/11025/713
dc.format5 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plzni, Fakulta elektrotechnickács
dc.relation.ispartofseriesElectroscopecs
dc.rights© 2012 Electroscope. All rights reserved.en
dc.subjecttenké vrstvycs
dc.subjectSiCcs
dc.subjectmorfologiecs
dc.subjectstrukturacs
dc.titleTheoretical and experimental investigation of SiC thin films surfaceen
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThis study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable with the structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of the obtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of thin films formation with prescribed properties and hence the using of them in the technology for elements of electronic engineering and by this reason the surface of monocrystalline SiC was analyzed.en
dc.subject.translatedthin filmsen
dc.subject.translatedmorphologyen
dc.subject.translatedstructureen
dc.subject.translatedSiCen
dc.type.statusPeer-revieweden
Vyskytuje se v kolekcích:Číslo 5 - EEICT 2012 (2012)
Číslo 5 - EEICT 2012 (2012)

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  1. DSpace at University of West Bohemia
  2. Publikace ZČU / UWB Publications
  3. Časopisy ZČU / UWB Journals
  4. Electroscope
  5. Ročník 2012
  6. Číslo 5 - EEICT 2012 (2012)