| Title: | Comparison of Waffle and standard gate pattern base on specific on-resistance |
| Authors: | Vacula, Patrik Husák, Miroslav |
| Citation: | Electroscope. 2014, č. 3, EDS 2014. |
| Issue Date: | 2014 |
| Publisher: | Západočeská univerzita v Plzni, Fakulta elektrotechnická |
| Document type: | článek article |
| URI: | http://147.228.94.30/images/PDF/Rocnik2014/Cislo3_2014/r8c3c7.pdf http://hdl.handle.net/11025/11823 |
| ISSN: | 1802-4564 |
| Keywords: | struktury MOS;tranzistory MOS |
| Keywords in different language: | MOS structures;MOS transistors |
| Abstract in different language: | The main goal of this work is to compare the different Waffle MOS structures as function between main dimensions and channel resistance (specific on-resistance). Even if Waffle MOS structure is so general that it is independent on dedicated CMOS process in fact constrains coming from specific CMOS process design rules has main influence on final Waffle MOS shape and final required area. Comparison describing how dimensions of Waffle MOS have influence on channel resistance would be proposed. Due to non-conventional gate geometry of the Waffle MOS transistor compare to the fingers structure, the channel W/L ratio calculation is not trivial and conformal Schwarz-Christoffel Transformation mapping was used. |
| Rights: | Copyright © 2014 Electroscope. All Rights Reserved. |
| Appears in Collections: | Číslo 3 (2014) Číslo 3 (2014) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Vacula.pdf | Plný text | 637,42 kB | Adobe PDF | View/Open |
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