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dc.contributor.authorVehec, Igor
dc.contributor.authorPietriková, Alena
dc.contributor.authorČech, Peter
dc.contributor.editorPihera, Josef
dc.contributor.editorSteiner, František
dc.date.accessioned2018-01-04T08:32:16Z
dc.date.available2018-01-04T08:32:16Z
dc.date.issued2017
dc.identifier.citationElectroscope. 2017, č. 2.cs
dc.identifier.issn1802-4564
dc.identifier.urihttp://hdl.handle.net/11025/26596
dc.format5 s.
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plzni, Fakulta elektrotechnickács
dc.relation.ispartofseriesElectroscopecs
dc.rightsCopyright © 2007-2010 Electroscope. All Rights Reserved.en
dc.subjectzatíženícs
dc.subjectAl-1%Si drátycs
dc.subjectelektromigrační fenoméncs
dc.titleDegradation of Al-1%Si wires bonded onto copper padsen
dc.typečlánekcs
dc.typearticleen
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThe current load and its influence on degradation of Al-1%Si wires bonded onto copper pads is presented in this paper. The current load was chosen to occur the electromigration phenomenon during ageing. Our attention was paid to the direction of current from Cu pad to Al wire, and as well as reversed from Al wire to Cu pad. The dependencies of electrical resistance (ΔR/R0) relative change vs time as well as dependencies of mechanical strength vs time for different types of current stresses (direct current IDC and pulse current IPULSE) were obtained and evaluated. The results were evaluated in relation to all above mentioned conditions moreover thermal ageing at 100°C/1000 h was applied and evaluated too.en
dc.subject.translatedpower loaden
dc.subject.translatedAl-1%Si wiresen
dc.subject.translatedelectromigration phenomenonen
dc.type.statusPeer-revieweden
Appears in Collections:Číslo 2 (2017) - IMAPS flash Conference 2017
Číslo 2 (2017) - IMAPS flash Conference 2017

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