Title:	Raman spectroscopy used to assess the temperature and mechanical stress in thin films of microelectronic structures
Authors:	Kadlečíková, M. Vančo, Ĺ Breza, J. Priesol, J. Šatka, A.
Citation:	Electroscope. 2018, č. 1.
Issue Date:	2018
Publisher:	Západočeská univerzita v Plzni, Fakulta elektrotechnická
Document type:	článek article
URI:	http://147.228.94.30/images/PDF/Rocnik2018/Cislo1_2018/r12c1c15.pdf http://hdl.handle.net/11025/31008
ISSN:	1802-4564
Keywords:	Ramanova spektroskopie;mikroelektronické struktury;tenké vrstvy;zkoušení materiálu
Keywords in different language:	Raman spectroscopy;microelectronic structures;thin films;material testing
Abstract in different language:	In this experimental work we examined the temperature and mechanical stress in the thin films of microelectronic structures based on GaN and AlN by Raman spectroscopy. The rise in temperature in the Raman spectrum is shown by shifting the Raman bands toward lower wavenumbers. Similarly like with changes of temperature, the changes of the positions of Raman bands may indicate the changes of mechanical stress in the structure. It was confirmed experimentally that in the case of tensile stress the Raman bands are shifted towards lower wavenumbers, and under compressive stress to higher wavenumbers.
Rights:	Copyright © 2018 Electroscope. All Rights Reserved.
Appears in Collections:	Číslo 1 (2018) Číslo 1 (2018)

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